Gamma-ray Irradiated Organic Thin Film Transistors Based on Perfluoropentacene with Polyimide Gate Insulator
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概要
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N-channel field effect transistors with a Si/polyimide(PI)/perfluoropentacene/Au structure were fabricated, and irradiated wby gamma-ray ith a Co60 source. The changes of the drain current ID vs. source/drain voltage VSD (ID - VSD) characteristics were measured after every 200 Gray in silicon (GySi) irradiations up to the total dose of 1200 GySi. The drain current ID gradually increased up to the total dose of 1200 GySi. The threshold voltage Vth decreased up to 400 GySi, and gradually recovered above 600 GySi. The mobility μ was almost unchanged up to 1200 GySi. Those behaviors were explained by accumulation of positive trapped charge within the gate insulator PI near the interface. Evidence for the accumulation of interface traps was hardly observed.
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