Novolak Resist Removal Using Laser (266/532nm)
スポンサーリンク
概要
- 論文の詳細を見る
Positive-tone diazonaphthoquinone/novolak resist on a 42-alloy (Fe:Ni=42:58wt%) substrate was irradiated by the second harmonic of Nd:YAG (Y3Al5O12) laser (532nm). The resist was removed (stripped) completely, despite the presence of hexamethyldisilane (HMDS) and the pre-bake condition of the resist. There was no apparent damage to the substrate by the laser. In contrast, this resist on a Si wafer could not be removed completely, and the substrate was occasionally damaged as well. The fourth harmonic of Nd:YAG laser (266nm) was used to irradiate the resist on the Si wafer, ablation was effective. There was no apparent damage to the substrate. This resist does not absorb the energy of the laser at 532nm because it is optically transparent (over 90%) above 500nm. However, its transmittance was very low (under 5%) below 300nm. The resist therefore absorbed the energy of the 266nm laser, and was removed (ablated). This development addresses environmental concerns because expensive and toxic chemicals are not used.
- The Society of Photopolymer Science and Technology (SPST)の論文
The Society of Photopolymer Science and Technology (SPST) | 論文
- Influence of Solvent Vapor Atmospheres to the Self-assembly of Poly(styrene-b-dimethylsiloxane)
- Conventional Measurement Method of Film Resistance of Plasma-Polymerized Thin Films Using a High-Resistance Meter
- Synthesis and Optical Properties of Carbazole-Containing Donor-Acceptor Type Conjugated Polymers
- Novolak Resist Removal Using Laser (266/532nm)
- Evaluation of Fluorinated Diamond Like Carbon as Antisticking Layer by Scanning Probe Microscopy