PAG Incorporated Polymeric Resists for Sub-100nm Patterning at 193nm Exposure

概要

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Chemically amplified systems, which provide improved sensitivity, are composed of a polymer matrix resin and small molecule photoacid generating units. The inherent discrepancies of the physical and chemical properties of these components can lead to phase separation thereby reducing resolution and sensitivity. Incorporating the PAG in the polymer main chain provides a unified system, which alleviates these problems. Furthermore, PAG incorporated in the chain may improve outgassing and acid diffusion control. Incorporated in the polymer chain was phenylmethacrylate dimethylsufonium triflate photoacid generator (Tf-PAG), which upon exposure generates triflic acid, providing the level of sensitivity required by chemical amplification (CA) systems. 2-Ethyl-2-adamantyl methacrylate (EAMA), and 3-hydroxy-1-adamantyl methacrylate (HAMA) served as the protecting group. (-Butyrolactone methacrylate (GBLMA) provided necessary substrate adhesion. PAGs bound in the main chain resist were exposed with the ASML PAS 5500/950B 193 nm Step and Scan System, with 0.63 NA. Resolution of 110nm line space (220 pitch) and 80 nm isolated lines, with photospeed of 8.2 mJ/cm2 and 2.5 mJ/cm2 respectively, were obtained for these PAG in the chain resists.
The Society of Photopolymer Science and Technology (SPST)の論文