A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep UV Lithography: IIIb. Optimization of PAG and Its Content

概要

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A thick single layer of poly(vinyl phenol) containing PAG was surface-silylated uniformly with HMDS. When TPS-SbF6 and TPS-Tf were used as the PAG, surface sublayer thickness was 130-200 nm and 60-150 nm, and O(sub>2 RIE durability was 10-31 and 18-43, respectively. The SSS Resist was patterned by DUV exposure, chemically amplified desilylation during PEB, wet development with TMAH, and O2 RIE blanking to form a positive-tone image with a high aspect ratio. The optimum sensitivity was 3 mJ/cm2 with TPS-SbF6 at 2.7 mol% loading and 2 mJ/cm2 with TPS-Tf at 6.3 mol% loading. The sensitivity with TPS-Tf was higher than that with TPS-SbF6, since TPS-Tf is less bulky, of larger diffusion constant, and has longer catalytic chain length of desilylation. The amount of TPS-Tf, appropriate for the optimum sensitivity was larger than that of TPS-SbF6, which was considered in conjunction with light absorption, acid generation by the PAG, acid-catalyzed desilylation, and dissolution inhibition by the remaining PAG unreacted.
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