Role of Bilayer Resist in 157 nm Lithography

概要

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The bilayer approach offers advantages associated with thin film imaging, such as relaxation of absorption and aspect ratio requirements along with improved depth of focus, line width control and etch resistance. The introduction of copper metallization into semiconductor manufacturing using Dual Damascene processes has provided a platform for bilayer resist rapid market growth. In the past couple of years, the demand for bilayer technology has significantly increased as limitations for single layer resist become tested and known. This trend is expected to continue as lithography transitions to 157 nm. This paper discusses the advantages of bilayer processing in addressing the challenges associated with these emerging applications with specific application to emerging 157 nm bilayer resist technology.
The Society of Photopolymer Science and Technology (SPST)の論文