Development of SSQ Based 157nm Photoresist
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概要
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Lowering absorbance of functional SSQ resists at 157 nm continues to be a challenging task. In the previous report, we showed the absorbance data and lithographic performance of several different SSQ platforms developed at JSR [1]. Two new SSQ platforms (σ and π) which showed improved absorbance value were reported in this article. New σ type and π type resist showed 157 nm absorbance value of 1.76 μm<SUP>-1</SUP> and 1.62 μm<SUP>-1</SUP> respectively. The absorbance value of π type polymer was as low as 1.19 μm<SUP>-1</SUP>. These improved resists also showed great lithographic properties. σ type resist is capable of resolving 55 nm 1:1 L/S with square profile using 0.85 NA tool. Integration aspects of this bilayer system were also presented.
- The Society of Photopolymer Science and Technology (SPST)の論文
The Society of Photopolymer Science and Technology (SPST) | 論文
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