Pattern Collapse Improvement in ArF Resist: Effect of Surfactant-added Rinse and Soft Bake
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In this study, we investigated the effect of surfactant-added rinse and soft bake on pattern collapse in ArF lithography. It was possible to obtain 21% narrower pattern with the aid of surfactant solution. Surfactant with low dynamic surface tension was more effective, so it seems to be required to consider dynamic properties of surfactant when we use spin dry. During the study, we found that pattern collapse occurred much earlier at the edge of wafer and we could decrease the positional difference by increasing bake time or temperature after resist coating. It is supposed that this result come from the relaxation of internal stress induced during spin coating
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The Society of Photopolymer Science and Technology (SPST) | 論文
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