A high supply voltage bandgap reference circuit using drain-extended MOS devices

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概要

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• A bandgap reference circuit that uses high-voltage drain-extended MOS (DeMOS) devices is presented for high supply voltage application without using a voltage regulator for the bandgap core circuit. The bandgap reference circuit was fabricated using commercially available 0.18µm high-voltage DeMOS technology. Measurement result of the chip shows that the reference voltage change rate for VDD variation from 5V to 30V and for the temperature variation from -40°C to +140°C were 1.16mV/V and 0.84mV/°C, respectively. The measured reference voltage with the supply voltage of 15V at room temperature was 2.487V. The current consumption and the active area were 3.2µA and 320×345µm<SUP>2</SUP>, respectively.

著者

• Kim Tag

  Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te

• Hwang Kyung

  Coolpower Technology Inc.

• Cho Geun

  Department of Electrical Engineering, KAIST

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• A high supply voltage bandgap reference circuit using drain-extended MOS devices

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