A Wet Process for Forming an Adhesive Copper Layer on Polyimide Film
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概要
- 論文の詳細を見る
A wet process for forming an adhesive Cu layer on polyimide (PI) film was developed. In this process, the surface of the PI film is pretreated in plasma, followed by the formation of a ligand-bearing organic layer of 3-aminopropyltriethoxy silane (APTES) molecules. After catalyzation with a solution containing Pd ions, thin layers of NiB as the underlayer and that of Cu as the conductive layer are deposited by electroless depositions, and then a 10 µm thick Cu layer is electrodeposited. The peel strength of the specimen prepared by this method was found to depend on the morphology of the NiB underlayer. A continuous NiB layer functions as a barrier layer that prevents Cu from contacting the PI film. In the presence of this efficient barrier layer, the peel strength was found to improve after annealing at 150°C.
- 公益社団法人 電気化学会の論文
著者
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OSAKA Tetsuya
Advanced Research Institute for Science & Engineering
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YOSHINO Masahiro
Advanced Research Institute for Science & Engineering
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OKINAKA Yutaka
Advanced Research Institute for Science and Engineering, Waseda University
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WAKATSUKI Satoshi
School of Science and Engineering
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MASUDA Toyoto
Advanced Research Institute for Science & Engineering
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YAMACHIKA Noriyuki
School of Science and Engineering
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SASANO Junji
Consolidated Research Institute for Advanced Science and Medical Care, Waseda University
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MATSUDA Itsuaki
Advanced Research Institute for Science & Engineering
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MATSUDA Itsuaki
Advanced Research Institute for Science & Engineering
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OKINAKA Yutaka
Advanced Research Institute for Science & Engineering
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MASUDA Toyoto
Advanced Research Institute for Science & Engineering
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- A Wet Process for Forming an Adhesive Copper Layer on Polyimide Film
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