IMAによる化合物半導体の定量分析

概要

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The quantitative correction procedures of an ion microanalysis based on the Saha-Eggert equation was applied to Si doped GaAs Samples to examine validity of the appli-cation. The Si concentrations in GaAs measured by means of Emission Spectroscopy were used as standard values. The agreement between calculated and standard concentrations was very good, especially in the case of the measurement with an O2+ beam. In this calculation, the SUMT method was adopted as a minimum seeking method. A mechanism of secondary ion emission from GaAs samples was also discussed on the basis of the LTE plasma theory. The results;(i)the secondary ion intensities don't increase with introduction of oxygen gas into a target chamber, which shows the mechanism of secondary ion emission is not "Chemical Process".(ii)The target atoms are ionized by "Chemical Process" with energetic O2+ion bombardment.
日本質量分析学会の論文