The temperature dependence of the localization and scavenging of electrons in a glassy 2-methyltetrahydrofuran matrix.
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概要
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The nature and behavior of localized electrons in a γ-irradiated 2-methyltetrahydrofuran matrix were studied at 4 and 77 K by optical absorption measurements. Electrons localized in shallow traps generated at 4 K in a neat matrix showed one broad peak with ε<SUB>max</SUB> of 1.2×10<SUP>4</SUP> mol<SUP>－1</SUP> dm<SUP>3</SUP> cm<SUP>－1</SUP> at 1490 nm. The yield was 1.9 (for 100 eV energy absorbed). This yield is less than the yield of electrons localized in deep traps at 77 K, 2.6. With an increasing concentration of biphenyl added to the matrix, the localized electrons were completely transformed into biphenyl anions. The scavenging efficiency was twice as high at 4 K as at 77 K. These results indicated that the electron scavenging took place by tunneling of the once localized electrons.
著者
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Yoshida Hiroshi
Faculty Of Math Kyushu Univ.
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Ogasawara Masaaki
Faculty of Engineering, Hokkaido University
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Yoshizaki Masato
Faculty of Engineering, Hokkaido University
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Yoshida Hiroshi
Faculty of Engineering, Hokkaido University
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