Reaction process of zirconium tetrachloride with ammonia in the vapor phase and properties of the zirconium nitride formed.
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概要
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The reaction products of gaseous ZrCl<SUB>4</SUB> with ammonia were ZrCl<SUB>4</SUB>·2NH<SUB>3</SUB> at 300 °C; ZrCl<SUB>4</SUB>·2NH<SUB>3</SUB>, ZrClN, and NH<SUB>4</SUB>Cl at 350–700 °C; ZrCl<SUB>4</SUB>·2NH<SUB>3</SUB>, ZrClN, ZrN<I><SUB>x</SUB></I>, Zr<SUB>3</SUB>N<SUB>4</SUB>, and NH<SUB>4</SUB>Cl at 750 °C; ZrClN, ZrN<I><SUB>x</SUB></I>, Zr<SUB>3</SUB>N<SUB>4</SUB>, and NH<SUB>4</SUB>Cl at 800–950 °C: ZrN<I><SUB>x</SUB></I>, Zr<SUB>3</SUB>N<SUB>4</SUB>, and NH<SUB>4</SUB>Cl at 1000–1050 °C; and ZrN<I><SUB>x</SUB></I>, NH<SUB>4</SUB>Cl, and HCl at 1100–1400 °C. The N/Zr atomic ratios, <I>x</I>, of the ZrN<I><SUB>x</SUB></I> formed was 1.28 at 1100 °C, 1.24 at 1200 °C, 1.18 at 1300 °C, and 1.12 at 1400 °C. The lattice constants of the ZrN<I><SUB>x</SUB></I> formed were shown. The reaction process of gaseous ZrCl<SUB>4</SUB> with ammonia can be represented as follows: The reaction of gaseous ZrCl<SUB>4</SUB> with ammonia to form ZrCl<SUB>4</SUB>·2NH<SUB>3</SUB> occurs first. Above <I>ca.</I> 330 °C, the ZrCl<SUB>4</SUB>·2NH<SUB>3</SUB> reacts with ammonia to form ZrClN. Above <I>ca.</I> 750 °C, the ZrClN reacts with ammonia to form ZrN<I><SUB>x</SUB></I> and Zr3N4. Above <I>ca.</I> 1000 °C, ZrN<I><SUB>x</SUB></I>. was also formed by the thermal decomposition of the Zr<SUB>3</SUB>N<SUB>4</SUB>. On heating the ZrN<I><SUB>x</SUB></I><SUB>(<I>x</I>=1.28)</SUB>, formed by the vapor-phase reaction, at temperatures higher than 700 °C in an argon atmosphere, the value of <I>x</I> decreased and became close to that of the stoichiometric nitride, being 1.03 at 1100–1300°C.
- 公益社団法人 日本化学会の論文
著者
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Yajima Akimasa
Research Laboratory of Resources Utilization, Tokyo Institute of Technology
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Saeki Yuzo
Research Laboratory of Resources Utilization, Tokyo Institute of Technology
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Matsuzaki Ryoko
Research Laboratory of Resources Utilization, Tokyo Institute of Technology
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Segawa Yutaka
Research Laboratory of Resources Utilization, Tokyo Institute of Technology
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