Energy Distribution of Secondary Electrons from Copper-Beryllium Alloy by Bombardment of Positive Ions of Inert Gases. II. Activated Copper-Beryllium

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概要

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• The distribution curves of the kinetic energis of secondary electrons from the activated copper-beryllium surface impacted by inert gas ions were together with the yield of the secondary electrons, measured by the retarding potential method. The contact potential difference between the ion target (activated copper-beryllium) and the electron collector (gold) was also measured by the retarding potential method for the thermal electrons from tungsten, and the correction to the kinetic energies of secondary electrons by this contact potential difference was made. For the purpose of obtaining information about the emission characteristics of the increase in the yield ot secondary electrons by target activation, the distribution of <I>ΔN</I><SUB>0</SUB>(<I>E</I><SUB>k</SUB>), which is the difference in the secondary electrons emitted from activated and from electro-polished copper-beryllium, was plotted by electron energies. The main results obtained are as follows:<BR>(1) The contact potential difference between activated copper-beryllium and gold is 0.25 eV. (gold, negative).<BR>(2) The general features of the distribution curves of the secondary electrons emitted from activated copper-beryllium show a tendency similar to that of the secondary electrons emitted from electro-polished copper-beryllium, and they also show a great similarity to the distribution curves obtained from the not atomically clean semiconductor surface (germanium or silicon) by Hagstrum.<BR>(3) The distribution of <I>ΔN</I><SUB>0</SUB>(<I>E</I><SUB>k</SUB>) show a remarkable difference from the distribution curves for activated copper-beryllium. Distribution curves of <I>ΔN</I><SUB>0</SUB>(<I>E</I><SUB>k</SUB>) higher than about 4eV. in electron energies showed a great similarity to the distribution curves of the Auger electron obtained by Hagstrum. Moreover, the distribution of <I>ΔN</I><SUB>0</SUB>(<I>E</I><SUB>k</SUB>) for singly-charged ions shows clearly a separation in the electron energy scale; this result was explained by the fact that the stopping cross-section of the beryllium oxide is greater than that of the cupric oxide.<BR>(4) From the explanation of the distribution of <I>ΔN</I><SUB>0</SUB>(<I>E</I><SUB>k</SUB>), it is considered that the increase in the yield of secondary electrons by target activation depends on the stopping cross-section of beryllium oxide and on the Auger process of electron emission.

• 社団法人 日本化学会の論文

著者

• SUGIURA T.

  Department of Surgery, Chiba University School of Medicine

• Sugiura Toshio

  Department of Applied Chemistry College of Engineering University of Osaka Prefecture

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