プラズマCVD法による鉄鋼表面上へのSi3N4の析出と拡散について

概要

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A determination was made of the conditions favorable to the deposition and diffusion of Si3N4 on SKD11 steel substrates by means of an inductively coupled, externally heated plasma discharge and a push-pull Hartley RF (13.56-MHz) oscillator using a triode and having a maximum output of 70W was disigned. The reactive gases NH3 and SiN4 were diluted with Ar to a prescribed concentration. Test pieces of SKD11 measuring 5×5×0.5mm were prepared, thier surfaced were polished using diamond paste, and the Si3N4 was deposited onto the surface.By means of experiments based on a method using orthogonal table L27, it was found that the optimum distance between the test pieces and the oscillator electrode was 25cm, and the optimum ratio between NH3 and SiH4 was 1:2.5 at 1073K. The relationship between the distance between the test pieces and the oscillator electrode and the reaction temperature was 5% significant for the thickness of the diffusion layer.Investigation of the apparent activation enerty of the growth of the diffusion layer of Si3N4 yielded a value of 78.7kJ/mol at 1023K-1073K.
社団法人表面技術協会の論文