反応性イオンプレ-ティングによる配向性窒化アルミニウム薄膜の形成

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This study was carried out in an effect to deposit a transparent, preferentially c-axis oriented AlN film by a reactive ion plating method, in which aluminum metal and nitrogen gas were used as the evaporative source and reactive gas.Experiments were carried to investigate the influence on the c-axis orientation of the thin film of such deposition conditions as distance between hearth and substrate, substrate temperature, applied voltage and ionization current.The hardness of the AlN thin film was measured to examine the effect of these conditions on the quality of the structure of the thin films.The most highly c-axis oriented and transparent AlN films were deposited by reducing the distance between the hearth and the substrate from 500mm to 270mm.Substrate temperatures between 400°C and 450°C were adequate for the deposition of highly c-axis oriented films and they reached a maximum hardness of KK 3000 at these temperatures. The influence of applied voltage on the c-axis orientation was noticeable, but the degree of orientation did not change regularly with the change in applied voltage.The hardness of the films reached HK 3200 at an applied voltage of 0.2kV, and then decreased with further increases in voltage.The c-axis orientation was noticeable with the increase in ionization currents of 2∼8A, and hardness of films reached from HK 3400 to 3600, increasing abruptly under ionization currents of 8∼10A.
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反応性イオンプレ-ティングによる配向性窒化アルミニウム薄膜の形成

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