PVD法によるAl薄膜の結晶配向性とモルフォロジ-

概要

論文の詳細を見る
Aluminum thin films were prepared by vacuum evaporation and ion plating on SPCC substrates, and their crystal orientation and morphology were investigated by X-ray diffraction and scanning electron microscopy. The influences of argon gas pressure and bias voltage were also estimated by applying the adsorption inhibitor theory and the sputter theory. Deposition rate, ionization voltage and substrate temperature are also known to influence the orientation and the morphology of aluminum films, but these factors were kept constant in this study The relative intensity of the high surface energy plane (200) increased at an argon gas pressure of 7.3×10-3Pa, while that of the low surface energy plane (111) was increased by the effect of argon gas sputtering Surface crystal grain size decreased with increasing the argon gas pressure at constant bias voltage. In cross section, the morphology exhibits a columnar structure at high bias voltage, but at low bias voltage it exhibits a fine granular structure due to the adsorption of argon gas. A reciprocal relation between orientation and morphology was demonstrated for aluminum films deposited by ion plating.
一般社団法人表面技術協会の論文