真空スパッタリング用イオン源とその応用
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The present author have deen developed a new type ion source for vacuum sputtering which includes an electrostatic deflector. The ions emitted from the ion source are deflected by a set of deflecting electrodes, one of these is at the anode potential and the other at accelerating potentiál.<BR>The ion beam has been used to sputter conducting and insulating target materials. From these experimental result it is found that the deposition rate of a given material is approximately proportional to the primary ion current for given accelerating voltage. Typical rate of deposition of nickel film at distance of 7 cm from the target with a 500 μA, 5KV ion beam of 3 mm diam is 40 Å/min.<BR>As a practical application of the method, the nickel 40%-copper 54% alloy film for strain gauge was deposited by the two separate ion gun simultaneously. The content of these chemical composition was regulated by the primary ion beam current.
- 日本真空協会の論文
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