RFスパッタリングによるSiO<SUB>2</SUB>の附着速度と真空系の質

概要

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In spite of carefull regulation, the reproducibility of SiO<SUB>2</SUB> deposition rate has been sometimes poor in an rf sputtering system. This paper describes systematic experiments on the relationship between the deposition rate and vacuum quality in some sputtering systems. Data of the deposition rate versus vacuum characteristic parameters such as ultimate prssure, argon flow rate during sputtering, leak rate of air or water vapour, and baking time of the sputtering chamber are given. In addition gas analysis made by quadrupole mass filter shows that the pressure of water vapour is commonly most responsible for the reproducibility of the deposition rate. Internal liquid nitrogen trap pumping selectively water has been proved to be effective to suppress the decrease of the deposition rate and to improve reproducibility.
日本真空協会の論文