後方散乱法によってAr+とO2+で照射された銅と金膜のスパッタリング収率の測定

概要

論文の詳細を見る
Sputtering yields of Cu- and Au-films for bombardment by 40 keV Ar and O2 ions have been measured using Ruterford backscattering of 180 keV He ions. In cases of both Ar ion on Cu-films and Ar and O2 ions on Au-films, the dose dependence of sputtering yields is obtained in the range of about 100Å depth from the film surface, where sputtering yields are found to be nearly independent of these ion doses In the case of 02 ions on Cu-films, the sputtering yield decreases with the O2 ion dose. This reduction is most likely caused by the formation of Cu2O. The dependence of sputtering yields on incident angle is also obtained for Ar ions on Cu and for O2 ions on Au. Results are compared with theoretical predictions.
日本真空協会の論文