グロー放電法によるa-Si:F:H薄膜の作製とプラズマ分析

概要

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Flourinated amorphous silicon (a-Si:F:H) films have been prepared from a SiF4 gas diluted with H2 gas through a RF glow discharge method, and the optical property such as infrared (IR) transmission characteristics of a-Si:F:H films depending upon a total gas pressure, have been measured. At the IR transmission spectra of the films deposited at relative high gas pressure, an absorption of Si-O bond at 1100-1200 cm-1 remarkable. On the other hand, for a-Si:F:H films deposited at lower pressure, a Si-Hn wagging mode at about 630 cm-1 was observed prominently. In each films an absorption associated with a Si-Fn bond was very weak. The measurements of a plasma parameter such as a mean electron energy using a double probe method and of the optical emission spectroscopy for observing the chemical reactions in a plasma, have also performed. The contribution of H radicals and the possible reactions responsible for the deposition in gas phase and/or the substrate surface has been discussed more.
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