真空昇華法によるSiC単結晶の育成

概要

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SiC single crystals were successfully fabricated with an effective growth speed by a vacuum sublimation method. The dependence of the crystal growth rate on the pressure in the chamber and the temperature of the seed crystal was investigated. Maximum crystal sizes of 33 mm in diameter and 14 mm length can be achieved using crystal extension in the a-axis direction. Aluminum-doped SiC powders were used as the source for the sublimation process to grow p-type SiC single crystals. The electrical and optical properties of p-type SiC were measured. The carrier concentration of p-type single crystals can be intentionally varied at the range of 1×1015 to 3×1018/cm3, using aluminum as a dopant.