プラズマジェットCVDダイヤモンド膜形成におよぼすCH4濃度の影響

概要

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Diamond films were prepared on SiC substrates with four kinds of CH4-H2 reactant gases (3, 5, 7 and 10% CH4 concentration) using plasma jet CVD. The growth rate of films was a maximum of 3μm/min at 5% CH4 and was approximated to 2μm/min at other CH4 concentrations. Properties of the deposited films were investigated by SEY, TEX, micro Vickers hardness test, XRD analysis and Raman spectra analysis. The films deposited at lower CHI concentration had an agglomerate structure of idiomorphic grains and the morphology of diamond films changed to a predominating {100}face from a {111}face with an increase of CH4 concentration from 3% to 5%. The films deposited at high CH4 concentration were composed of fine diamond crystals and non-diamond materials. The best Raman spectrum indicating the diamond films of crystalline perfection and of the lowest density of non-diamond materials was obtained at 5% CH4 with the maximum growth of {100} face.
社団法人粉体粉末冶金協会の論文