蛍光EXAFS (放射光利用研究)

概要

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The design features and performance of a newly-built multi-detector fluorescence-detected X-ray absorption spectrometer at the Photon Factory are described. Feasibility of fluorescence-detected X-ray absorption spectroscopy such as extended X-ray absorption fine structure (EXAFS) and X-ray absorption near edge structure (XANES) for structural studies of very thin films is discussed. It is demonstrated that the local structure of thin films with a wide range of thickness from a few thousand Å down to a few tens of Å can be obtained. The ion beam-induced modification of thin nickel layers on Si (100) has been studied and the formation of amorphous Si-rich silicide as a result of ion bombardment is found.
日本結晶学会の論文