CZシリコン単結晶の微小欠陥
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概要
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Microdefects in Czochralski grown silicon single crystals have been investigated by transmission electron microscopy, infrared absorption spectroscopy, X-ray topography and etching technique. Swirl defects were identified as interstitial perfect dislocation loops and silicon oxide precipitates. Swirl oxide precipitates emit dislocation loops and stacking faults on thermal oxidation. Stacking fault growth was found to obey the Bardeen-Herring source mechanism, and to proceed through the absorption of silicon interstitials emitted by oxygen precipitation. Crystal growth under the supercooled condition is effective to suppress the defect introduction because growth rate fluctuation as well as oxygen dissolution from the quartz crucible are reduced.
- 日本結晶学会の論文