Mechanical properties comparison of phenylsilsesquioxane–methylsilsesquioxane hybrid films by indentation
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概要
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Sol–gel derived phenylsilsesquioxane (PhSiO3/2)–methylsilsesquioxane (MeSiO3/2) films were prepared on soda-lime-silicate (SLS) glass substrates by dropping and spreading method. The mechanical properties of the pure MeSiO3/2 and 20PhSiO3/2·80MeSiO3/2 (in mol %) films were measured as a function of heat treatment times and temperatures using a nanoindentation test with a Berkovich indenter. The relative residual depth (ξr) of films decreased and the film hardness (HM) significantly increased with increasing heat treatment times and temperatures. The mechanical properties of the films well reflect the changes in the chemical structures and the evolution of siloxane networks with the heat treatment.
著者
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Muto Hiroyuki
Department Of Materials Science Faculty Of Engineering Toyohashi University Of Technology
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Matsuda Atsunori
Department Of Materials Science Toyohashi University Of Technology
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Sakai Mototsugu
Department Of Materials Science Toyohashi University Of Technology
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AINUDDIN Ainun
Department of Environmental and Life Sciences, Graduate School of Engineering, Toyohashi University
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HAKIRI Norio
Department of Electrical and Electronic Information Engineering, Graduate School of Engineering, Toy
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SAKAI Mototsugu
Department of Electrical and Electronic Information Engineering, Graduate School of Engineering, Toyohashi University of Technology
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MATSUDA Atsunori
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology
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MATSUDA Atsunori
Department of Environmental and Life Sciences, Graduate School of Engineering, Toyohashi University of Technology
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AINUDDIN Ainun
Department of Environmental and Life Sciences, Graduate School of Engineering, Toyohashi University of Technology
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MUTO Hiroyuki
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology
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MUTO Hiroyuki
Department of Environmental and Life Sciences, Graduate School of Engineering, Toyohashi University of Technology
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HAKIRI Norio
Department of Electrical and Electronic Information Engineering, Graduate School of Engineering, Toyohashi University of Technology
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