Λ形負性抵抗素子を用いた多値SRAMの低消費電流化

概要

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A number of studies have recently been made on multi-stable circuits. We previously proposed a multi-stable circuit using Λ-shaped negative resistance devices constituted by enhancement-mode MOSFETs and voltage sources. However, because this circuit contains a lot of biasing circuits, it is disadvantageous in points of the area and current consumption. Our research, aim at construction of artificial neural network equipped for the learning function using plastic synapses which are multiple-valued memory cells. In this paper, we propose the circuit configuration into which cut down the components in the bias circuit of the voltage, and we study the low current consumption of proposed circuit. As a result, it is shown that the bias circuit cut down the number of 2(n-1) (n: number of multiple-valued) MOSFETs. Furthermore, it is shown that proposed circuit works [nA] unit, because the bias circuit connects the state of the high impedance to the driver circuit.