Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology

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概要

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• In this paper, an experimental analysis of the electrical characteristics of the PTSCR was conducted. The PTSCR contains a high trigger current and a holding voltage that enables latch-up immune during normal operation. The PTSCR in each process technology is verified by the TLP system as well as a hot chuck controller. The experimental results show that the trigger current and holding voltage are higher than that of other SCR devices. At higher temperatures, the holding voltage of the PTSCR decreased due to the operation mechanism of the SCR, while the trigger current increased due to the MOSFET trigger mechanism.

著者

• Koo Yong-Seo

  Department of Electronic Engineering Seokyeong University

• Koo Yong-Seo

  Department of Electronics and Electrical Engineering Dankook University

関連論文

• The design of high holding voltage SCR for whole-chip ESD protection
• Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology
• SCR stacking structure with high holding voltage for high voltage power clamp

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