Electric Resistance of Magnetic Domain Wall in NiFe Wires with CoSm Pinning Pads (SOLID STATE CHEMISTRY-Artificial Lattice Allolys)
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A NiFe wire of 1μm width with hard magnetic CoSm pinning pads and Cu electrodes was prepared by electron-beam lithography and lift-off technique. Using the exchange interaction between the NiFe wire and CoSm pads, magnetic structures with and without magentic domain walls were realizecd at zero external field. The electric resistance of the wall state was smaller than that of the no-wall state. The difference of the resistance can be explained by the anisotropic magnetoresistance effect in the domain walls.
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