Single InAs quantum dots in metal embedded nano-cone structures emitting in the telecommunication O and C bands (電子部品・材料)
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概要
- 論文の詳細を見る
In this work we present a way to use high density quantum dots (QDs) as a possible source for single photons and entangled photon pairs by isolating a small number of dots in suitable nanostructures. The used samples contain InAs/InAlGaAs QDs grown on InP substrates by molecular beam epitaxy and exhibit QD emission between 1.2 and 1.6 μm including the telecommunication O and C bands. We investigate the photoluminescence of individual QDs in metal embedded nano-cones at temperatures up to 200 K and thus demonstrate individual dot emission clearly above liquid Nitrogen temperature.
- 社団法人電子情報通信学会の論文
- 2011-08-18
著者
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SASAKI M.
National Institute of Radiological Sciences
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Suemune I.
Research Institute For Electronic Science Hokkaido University
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Huh J.
Research Institute For Electronic Science Hokkaido University
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Hermannstadter C.
Research Institute For Electronic Science Hokkaido University
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Jahan N.
Research Institute for Electronic Science, Hokkaido University
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Sasakura H.
Research Institute for Electronic Science, Hokkaido University
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Akahane K.
National Institute of Information and Communications Technology (NICT)
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Sasakura H.
Research Institute For Electronic Science Hokkaido University
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Jahan Nahid
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Huh Jae-Hoon
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan
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Hermannstaedter Claus
Research Institute for Electronic Science, Hokkaido University
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