High-Reflectivity ZnSe/ZnS Distributed Bragg Reflectors in Blue Region Grown on (311)B GaAs Substrates

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• UESUGI K.

  Research Institute for Electronic Science, Hokkaido University

• Suemune I.

  Research Institute For Electronic Science Hokkaido University

• Tawara T.

  Research Institute For Electronic Science Hokkaido University

• ARITA M.

  Research Institute for Electronic Science, Hokkaido University

• Arita M.

  Research Institute For Electronic Science Hokkaido University

• TAWARA T.

  Research Institute for Electronic Science, Hokkaido University

関連論文

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• Single InAs quantum dots in metal embedded nano-cone structures emitting in the telecommunication O and C bands (電子部品・材料)
• High-Reflectivity ZnSe/ZnS Distributed Bragg Reflectors in Blue Region Grown on (311)B GaAs Substrates
• Growth of Self-Organized ZnSe Quantum Dots by MOVPE
• Very-Large-Gain Collector-Up GaN/W/WO_3 Metal Base Transistors

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