Very-Large-Gain Collector-Up GaN/W/WO_3 Metal Base Transistors
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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UESUGI K.
Research Institute for Electronic Science, Hokkaido University
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Asbeck P.
Ece Dept. University Of California
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MOCHIZUKI K.
Central Research Laboratory, Hitachi, Ltd.
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GOTOH J.
Image-Related Device Development Center, Hitachi, Ltd.
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MISHIMA T.
Central Research Laboratory, Hitachi, Ltd.
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HIRATA K.
Hitachi ULSI Systems Corp.
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ODA H.
Hitachi ULSI Systems Corp.
関連論文
- Selective Area Growth of Widegap II-VI Semiconductors on Patterned Substrates
- First Epitaxial Growth of Zincblende ZnSe/MgS Superlattices
- High-Reflectivity ZnSe/ZnS Distributed Bragg Reflectors in Blue Region Grown on (311)B GaAs Substrates
- Very-Large-Gain Collector-Up GaN/W/WO_3 Metal Base Transistors