25pTG-12 New Reconstruction Mechanism of Dense SiC(111) on Sparse Si(110) Interface
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 2011-03-03
著者
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Oshiyama Atsushi
Department Of Applied Physics The University Of Tokyo
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Abavare Eric
Department of Applied Physics, The University of Tokyo
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Iwata Jun-ichi
Center for Computational Science, University of Tsukuba
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Iwata Jun-ichi
Center For Computational Science University Of Tsukuba
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Abavare Eric
Department Of Applied Physics The University Of Tokyo
関連論文
- Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots
- 25pTG-12 New Reconstruction Mechanism of Dense SiC(111) on Sparse Si(110) Interface
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- Electronic Structure of Quasi-One-Dimensional Transition Metal Chalcogenide Nb_3X_4
- Stabilization Mechanism of Vacancies in Group-III Nitrides: Exchange Splitting and Electron Transfer
- Absence of Dirac Electrons in Silicene on Ag(111) Surfaces