Stabilization Mechanism of Vacancies in Group-III Nitrides: Exchange Splitting and Electron Transfer
スポンサーリンク
概要
- 論文の詳細を見る
We report first-principles calculations on mono-, di-, and tri-vacancies in group-III nitrides with clarifying two distinctive mechanisms in stabilization of the vacancy: Spin polarization due to exchange splitting of nitrogen-dangling bond states and electron transfer caused by breathing relaxation of cations. We also find that the significance of the two mechanisms strongly depends on the charge state of the vacancy and thus the Fermi-level position in the gap at which the charge state changes (the thermodynamic charge-state level) cannot be determined from single-electron levels at a certain charge state.
- Physical Society of Japanの論文
- 2010-08-15
著者
-
Gohda Yoshihiro
Department Of Materials Engineering The University Of Tokyo
-
Oshiyama Atsushi
Department Of Applied Physics The University Of Tokyo
-
Atsushi Oshiyama
Department of Applied Physics, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
-
Yoshihiro Gohda
Department of Physics, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
関連論文
- First-Principles Study of Apparent Barrier Height : Surfaces, Interfaces, and Films
- Ab Initio Calculation of the Electric Properties of Al Atomic Chains under Finite Bias Voltages : Electronical Properties of Condensed Matter
- 25pTG-12 New Reconstruction Mechanism of Dense SiC(111) on Sparse Si(110) Interface
- Electrical Resistivity due to Electron-Electron Scattering in Quasi-One-Dimensional Metals
- Electronic Structure of Quasi-One-Dimensional Transition Metal Chalcogenide Nb_3X_4
- Stabilization Mechanism of Vacancies in Group-III Nitrides: Exchange Splitting and Electron Transfer
- Ab Initio Calculation of Capacitance of Semi-Infinite Jellium Electrodes with a Nanoscale Gap
- First-Principles Calculation of Vibrational Properties of a Nanostructure in Electric Fields
- Absence of Dirac Electrons in Silicene on Ag(111) Surfaces
- Theoretical Analysis of Electron Standing Waves and Electric Field Intensity in the Vacuum Gap of Scanning Tunneling Microscopy