MCH-12 Monolithically integration of GaN light-emitting diode and Si substrate with AlN/GaN superlattice as interlayer(Micro/Nanomechatronics IV,Technical Program of Oral Presentations)
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概要
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InGaN/GaN p-i-n junction was deposited on GaN/Si template with AlN/GaN supperlattice as interlayer by molecular beam epitaxy. Different surface microstructure of the p-GaN was affected by the amount of Mg flux. Light-emitting diode was fabricated from the p-i-n junction. The crystal properties of InGaN/GaN p-i-n junction and the related light-emitting diode properties were investigated.
- 2009-06-17
著者
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ITO R.
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Wakui M.
Department Of Nanomechanics Tohoku University
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Sameshima H.
Department Of Nanomechanics Tohoku University
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Hane K.
Department Of Nanomechanics Tohoku University
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Hane K.
Department Of Mechatronics And Precision Engineering Tohoku Universit
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Hu F.R.
Department of Nanomechanics, Tohoku University
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Hu F.r.
Department Of Nanomechanics Tohoku University
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