Interaction of bis-diethylaminosilane with a hydroxylized Si (001) surface for SiO_2 thin-film growth using density functional theory(Session 7A : Gate Oxides)
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概要
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We studied the interaction of bis-diethylaminosilane (SiH_2[N(C_2H_5)_2]_2, BDEAS) with a hydroxylized Si (001) surface for SiO_2 thin-film growth using density functional theory (DFT). BDEAS was adsorbed on the Si surface and reacted with the H atom of hydroxyl (-OH) to produce the di-ethylaminosilane (-SiH_2[N(C_2H_5)_2], DEAS) group and di-ethylamine (NH(C_2H_5)_2, DEA). Then, DEAS was able to react with another H atom of-OH to produce DEA and to form the 0-(SiH_2)-0 bond at the inter-dimer, inter-row, or intra-dimer site. Among the three different sites, the intra-dimer site was the most probable when it came to forming the O-(SiH_2)-O bond.
- 社団法人電子情報通信学会の論文
- 2010-06-23
著者
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Baek Seung-bin
Department Of Materials Engineering Korea University Of Technology And Education
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Kim Dae-hee
Department Of Materials Engineering Korea University Of Technology And Education
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Yoo Yong-min
Department Of Materials Engineering Korea University Of Technology And Education
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Kim Yeong-Cheol
Department of Materials Engineering, Korea University of Technology and Education
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Baek Seung-bin
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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Kim Yeong-cheol
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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Kim Dae-hee
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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Kim Dae-Hee
Department of Materials Engineering, Korea University of Technology and Education
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Baek Seung-Bin
Department of Materials Engineering, Korea University of Technology and Education
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Yoo Yong-Min
Department of Materials Engineering, Korea University of Technology and Education
関連論文
- Interaction of bis-diethylaminosilane with a hydroxylized Si(001) surface for SiO2 thin-film growth using density functional theory (Electron devices)
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