Interaction of Bis-diethylaminosilane with a Hydroxylized Si (001) Surface for SiO_2 Thin-Film Growth Using Density of Functional Theory
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概要
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We studied the interaction of Bis-diethylaminosilane (SiH2[N(C2H5)2]2, BDEAS) with a hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory (DFT). BDEAS was adsorbed on the Si surface and reacted with the H atom of hydroxyl (-OH) to produce thedi-ethylaminosilane (-SiH2[N(C2H5)2], DEAS) group and di-ethylamine (NH(C2H5)2, DEA). Then, DEAS was able to react with another H atom of -OH to produce DEA and to form the O-(SiH2)-O bond at the inter-dimer, inter-row, or intra-dimer site. Among the three different sites, the intra-dimer site was the most probable when it came to forming the O-(SiH2)-O bond.
- 2011-05-01
著者
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Baek Seung-bin
Department Of Materials Engineering Korea University Of Technology And Education
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Baek Seung-bin
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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Kim Yeong-cheol
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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Kim Dae-hee
Department Of Energy Materials Chemical Engineering Korea University Of Technology And Education
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