Heat dissipation and the nature of negative-differential-resistance for GaAs Gunn diodes(Session8B: High-Frequency, Photonic and Sensing Devices)

概要

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We examined the heat dissipation and the nature of the negative-differential-resistance for GaAs Gunn diodes in a vertical device structure and a planar structure. In the vertical structure we designed and fabricated the Gunn diodes taking into consideration the effective heat dissipation through integral heat sink and sufficient wafer thinning for the standard Gunn diode packaging. Size of circular anode varies from 42-70μm in diameter. In the standard integral heat sink technique, the substrate was thinned to a thickness of 10-13μm after forming the heat sink. In the planar structure, the cathode was situated inside the anode for modular packaging of the flip-chip bonding. We compared the results for the negative-differential-resistance in the planar structure with the vertical one and discussed the heat dissipation.
社団法人電子情報通信学会の論文
2008-07-02