Design and fabrication of planar GaAs Gunn diodes (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• We designed and fabricated the planar graded-gap injector GaAs Gunn diodes with 1.6μm active length for operation at 94GHz. The fabrication of the Gunn diode is based on MESA etching, ohmic metallization, overlay metallization, and air bridge interconnection. In the first diode, the cathode is situated in the inner circle of the anode electrode having the cathode diameter of 60-70μm We design this one such that the distance between the anode and the cathode metal electrodes has constant distance of 10μm. In the second diode, anode is situated in the inner side of the cathode for module and package of flip-chip bonding structure. The DC measurements are carried out, and the nature of the negative differential resistance, operating voltage, and output power in the graded-gap injector GaAs Gunn diodes are discussed for different device structures.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Rhee J.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Kim M.

  Millimeter-wave Innovation Technology Research Center, Dongguk University

• Lee S.

  Millimeter-wave Innovation Technology Research Center, Dongguk University

• Lee S.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Kim M.

  Millimeter-wave Innovation Technology Research Center Dongguk University

• Chae Y.

  Millimeter-wave Innovation Technology Research Center Dongguk University

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• Design and fabrication of planar GaAs Gunn diodes (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Design and fabrication of planar GaAs Gunn diodes (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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