Total and Partial Dielectronic and Radiative Recombination of Xe^<10+> Ions(Atomic and molecular physics)
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概要
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In this paper we study dielectronic and radiative recombination processes of Xe ions. We have calculated the energy levels, radiative transition probabilities, autoionization rates, and radiative recombination cross section for Xe^<10+> ions using the flexible atomic code (FAC). New dielectronic recombination rate coefficients to excited states of Xe^<9+> as well as total rate coefficients from the Xe^<10+> ions are presented. We also calculated the related dielectronic satellite lines. We studied the n- and l- dependence for the dielectronic recombination rate coefficient and the radiative recombination rate coefficient. The dielectronic satellite lines through the 4d^8+e→4d^7 4f^1 nl→4d^8 nl+hν and the 4d^8+e→4d^7 5p^1 nl→4d^8 nl+hν are calculated and found to be important at low electron temperature for line intensities comparing to the lines produced by excitation. The radiative recombination rate coefficients are always smaller than the values of the dielectronic recombination rate coefficient in the interesting temperature region of T_e=1-1000eV. The contribution of highly excited states to the total dielectronic recombination is important. We estimated the density effect on the dielectronic recombination rate coefficient. It is found that the dielectronic recombination rate coefficients are larger than radiative recombination rate coefficients in the density region n_e<10^<19>cm^<-3>.
- 社団法人日本物理学会の論文
- 2008-06-15
著者
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Song Mi-young
National Fusion Research Institute
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Kato Daiji
National Inst. Fusion Sci. Toki Jpn
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Kato Daiji
National Institute For Fusion Science
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KATO Takako
National Institute for Fusion Science
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MURAKAMI Izumi
National Institute for Fusion Science
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RALCHENKO Y.
National Institute of Standards and Technology
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