319 三点支持裏返し法による大面積・薄肉パネルの板厚測定(OS-10 加工計測・評価)

概要

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The important parameters in the shape measurement of semiconductor substrates are warp and thickness. Recently, high accuracy measurement method for each parameter is developed, respectively. However, the measurement which can measure the warp and thickness simultaneously has not been established. Thus, in this study, the development of the simultaneous measurement method of warp and thickness was tried. This measurement method is combining the three-point-support method which was developed to measure the warp with the analysis of gravity-induced deflection of silicon wafer. The thickness measurement could be carried out of 2.4μm in measurement error for the silicon wafer whose thickness was about 780μm. It was considered that the cause of the error was the difference of mechanical properties in the analysis of gravity-induced deflection of a silicon wafer.
社団法人日本機械学会の論文
2006-11-24