The Structural and Electrical Characteristics of Silicon-Implanted Borosilicate Glass : Electrical Properties of Condensed Matter

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The structural and electrical properties of silicon-implanted borosilicate glass (BSO:Si^+) are studied. The nearly amorphous phase of as-implanted BSO:Si^+ with a weak and broadened X-ray diffraction peak transforms into crystallite phases with associated peaks positioned at azimuth angles of 29° and 14° after thermal annealing. These peaks correspond to (111)-oriented Si nanocrystals of 0.6-0.8 nm size and the regrown (021)-oriented BSO host, respectively. The intensity of the photoluminescent (PL) peak of the BSO:Si^+ centered at 520nm is found to decrease due to both the elimination of the radiative defects and the precipitation of Si nanocrystals, however, nanocrystal-related PL is not initiated even after low-temperature and long-term(> 4h) annealing. Relatively high leakage current Schottky diodes with contact patterns for transmission line measurement (TLM) made on as-implanted BSO:Si^+ reveal the defect-enhanced current transport mechanism. After annealing at 500℃ for 60min or longer, the leakage current of the BSO:Si^+ diode dramatically decreases by at least two orders of magnitude. The current-voltage analysis attributes the disappearance of the resonant tunneling behavior of the TLM diode made on as-implanted BSO:Si^+ with negative differential resistance to the annealing-induced reduction of radiative defect concentration.
社団法人応用物理学会の論文
2002-12-01