Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate

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概要

• 論文の詳細を見る

• The historical review of Taiwans researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.

• （社）電子情報通信学会の論文
• 2008-02-01

著者

• Lin Gong-ru

  Institute Of Electro-optical Engineering National Chiao Tung University

• Lin Gong-ru

  Institute Of Electro-optic Engineering Naional Chiao Tung University

• Lin Gong-ru

  Institute Of Photonics And Optoelectronics National Taiwan University

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