Ultraviolet Photovoltaic Effect of Au/TiO_2/Ge Metal OXide Semiconductor Structure Film : Semiconductors

概要

論文の詳細を見る
Photovoltaic films of metal oxide semiconductor (MOS) structure are prepared by evaporating a semi-transparent Au electrode on photoconductive TiO_2/Ge bilayer films. Photovoltage is observed under illumination at photon energies ranging from 2.5eV to 4.0eV. The origin of the photovoltaic effect is explained in terms of the photoassisted dissociation reaction O_2^-+e^-→2O^- for unbound O_2^- ions, which are produced near the TiO_2/Ge interface in the process of sample preparation and behave as fixed oxide charges. In the photoreaction, electrons are captured from the Ge layer and occupy high energy levels outside the band gap of Ge. It is suggested that such electrons are transmitted to the Au electrode through the TiO_2 layer by tunneling.
社団法人応用物理学会の論文
2002-08-01