Thermal Growth of Thin Oxide in Ge Films and Interfacial Bond Defects of Oxygen
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概要
- 論文の詳細を見る
Taking account of the high photoabsorption coefficient of Ge for 290 nm light, we investigate the thermal growth of thin oxide in Ge films by utilizing a double-beam UV spectrometer, and discuss the results in connection with photoconduction accompanied by oxidation. Rapid growth in the initial stage of oxidation up to 18 Å thickness follows the kinetics of slow linear rates. Oxidation at temperatures lower than 400℃ induces oxygen bond defects with high density at the Ge-GeO_2 interface.
- 社団法人応用物理学会の論文
- 1995-05-01
著者
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SUNADA Junji
Faculty of Education, Chiba University
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Sunada J
Chiba Univ. Chiba Jpn
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Sunada Junji
Faculty Of Education Chiba Universi
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Sunada Junji
Faculty Of Education Chiba University
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Taneda Y
Department Of Mathematics And Physics National Defense Academy
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Taneda Youji
Department Of Mathematics And Physics The National Defense Academy
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Taneda Youji
Department Of Mathematics And Physics Defence Academy
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Hirose Masami
Hyogo University Of Teacher Education
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FUKUCHI Ken-ichi
Faculty of Education, Chiba University
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Fukuchi Ken-ichi
Faculty Of Education Chiba University:(present Address)kisarazu National College Of Technology
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