Mechanical stress issues in semiconductor technology (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

• 論文の詳細を見る

• As semiconductor technology scales down, the stress induced change of device characteristics becomes more important in addition to the stress induced structure deformation or rupture. One should understand which conditions and shapes increase the stress, and choose a useful method to reduce or to utilize the stress. The performance could be raised by analyzing and considering the stress effects on the electrical characteristics with the design for manufacturing.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• CHOI Jae

  R&D Division, Hynix Semiconductor Inc.

• Choi Jae

  R&d Division Hynix Semiconductor

関連論文

• Retention Time Analysis on DRAM Cell Transistor from Planar to Nonplanar Gate Structures(Session 4 Silicon Devices II,AWAD2006)
• Retention Time Analysis on DRAM Cell Transistor from Planar to Nonplanar Gate Structures(Session 4 Silicon Devices II,AWAD2006)
• Retention Time Analysis on DRAM Cell Transistor from Planar to Nonplanar Gate Structures
• Mechanical stress issues in semiconductor technology (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Mechanical stress issues in semiconductor technology (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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