Impact of Reticle Topography on Field Curvature and Overlay Errors in Optical Lithography

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概要

• 論文の詳細を見る

• An accurate method for measuring defocus, which is an application of phase shifting mask technology for higher resolution microlithography, reveals the impacts of reticle topography on optical microlithography. On the topographic reticles, there exist many focus monitors besides overlay marks. These reticles include almost flat and convex to concave topography with a maximum altitude difference of 2 μm. Contrary to our expectation, the experimental results showed that reticle topography has little impact on the field curvature, but has a significant impact on overlay errors. The lithography tool used in this experiment presses topographic reticles flatly against the face of a reticle stage to plane the field curvature, with generating magnification errors only in the slit direction.

• 社団法人応用物理学会の論文
• 2002-12-15

著者

• Nomura Hiroshi

  Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation

関連論文

• Accurate Measurement of Spherical and Astigmatic Aberrations by a Phase Shift Grating Reticle : Semiconductors
• Measurement of Wave-Front Aberrations in Lithography Lenses with an Overlay Inspection Tool
• A Novel Technique for Measuring Defocus with Phase Shift Gratings on a Photomask
• Impact of Reticle Topography on Field Curvature and Overlay Errors in Optical Lithography
• Investigation of High-Precision Lithography Lens Aberration Measurement Based on Three-Beam Interference Theory : Sensitivity versus Coherent Factor and Variations with Dose and Focus
• Aberration Monitoring toward Wavefront Matching with Device Patterns

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