Microstructure and Thermal Diffusivity Investigations of RF-Sputtered Tantalum Nitride

概要

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Tantalum nitride films were prepared by RF magnetron sputtering. The thermal diffusivity of these films was measured using a traveling thermal wave method. The measured values of thermal diffusivity are within the range 0.10-0.15 cm^2/s with a deviation ±0.01 cm^2/s and proportional to the nitrogen contents. The incorporation of oxygen impurity in the TaN films was found not available as examined by transmission electron microscopy (TEM) and X-ray photoelectron spetroscopy (XPS) quantitative analyses. TEM examination shows that the microstructure in TaN film, deposited with an N2/Ar flow ratio 1: 19, is composed of metallic particles dispersed in an amorphous matrix. High resolution TEM photograph reveals that the amorphous structure further contains a nano-crystalline phase embedded in a continuous amorphous phase. The nano-crystalline particles are characterized as hexagonal Ta2N phase with a lattice spacing d_<110> = 3.05 Å. By XPS Ta(4f) spectra, some Ta-N and Ta-O signals were evidenced to co-exist in a broadened peak. Furthermore, by FTIR analysis, a new vibration not reported before in the literature was found at 1118 cm^<-1> that has heen assigned to the Ta-N-O linkage in the films.
社団法人応用物理学会の論文
2002-08-15