SiO_2 Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering : Magnetism

スポンサーリンク

概要

• 論文の詳細を見る

• We have investigated the deposition conditions for a SiO_2 insulation layer, such as the substrate-target length, Ar pressure and applied RF power density, using both RF magnetron facing target sputtering and the conventional RF sputtering techniques. We have fabricated an SiO_2 layer having with a good surface smoothness under the high deposition rate condition using the RF magnetron facing target sputtering technique.

• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Hara Toshihiro

  Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University

• Kawanishi Masanori

  Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University

• Tsujimura Shogo

  Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University

• MATSUO Atsunori

  Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi Universi

• Matsuo Atsunori

  Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University

• Morohashi Shin'ichi

  Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi University

関連論文

• Application of Micro-CT to the Measurement of Enamel Thickness
• A Morphological Study of the Apical Third of the Root Canal in the Maxillary First Premolar using Micro-CT
• Characteristics of Superconducting Nb Layer Fabricated Using High-Vacuum Electron Beam Evaporation
• SiO_2 Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering : Magnetism
• Fabrication of a Tantalum-Based Josephson Junction for an X-Ray Detector
• A novel PET scanner with semiconductor detectors may improve diagnostic accuracy in the metastatic survey of head and neck cancer patients

スポンサーリンク