プロトン・ヘリウム照射によるパワー半導体用Siウエハーの照射欠陥の観察

概要

論文の詳細を見る
Proton and 3He irradiation in Si-wefer is recently used to improve the efficiency of power transistors by controlling a carrier life-time. Due to Bragg effects the radiation defects locate in a narrow region from the surface in a Si-wafer. Until now the location of the defects is detected by measuring electrical resistivity using a micro probe on two dimentional surface area. In the present paper the observation of irradiation defects by optical microscope and atomic force microscope (AFM) are reported, by which we succeeded to observe the defect position precisely. The pictures taken by CCD camera were analyzed using RGB imaging analysis program and from which the location of the defects have been determined. For 3He irradiation the defects distribute in a narrower range compared to that for proton. From this technique it becomes possible to observe radiation damages in a wide area with high accuracy. And this technique will be used more widely for the improvement of power transistors in future.
愛媛大学の論文