SIMS の深さ方向分析測定における最近の動向

概要

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The problems in SIMS (secondary ion mass spectrometry) depth profiling for multi thin layers are reviewed from the viewpoint of physical phenomena of SIMS. Some new techniques tried recently in order to overcome the difficulties in SIMS depth profiling are introduced. On the other hand, as a technique alternative to depth profiling, scanning ion image analysis for a beveled surface using gallium focused ion beam has been developed. To improve the secondary ion yields, the oxygen ions for the positive ion detection and cesium ions for the negative ion detection are implanted prior to image analysis. The procedure is as follows: 1) The sample is beveled at an angle below 0.5°; 2) the oxygen or cesium ions are implanted in a part of the surface; 3) the gallium focused ion beam is scanned on the implanted surface; 4) the secondary ions sputtered from the scanning area are processed as an ion image. A significant enhancement of ion image sensitivity in the implanted area was observed. This technique is especially useful for the samples with rough surface or polycrystalline metals.
拓殖大学の論文
2004-10-20